Origins of ductile plasticity in a polycrystalline gallium arsenide during scratching: MD simulation study

This paper used molecular dynamics simulation to reveal the origins of ductile plasticity in polycrystalline gallium arsenide (GaAs) during its nanoscratching. Velocity-controlled nanoscratching tests were performed with a diamond tool study friction-induced deformation behaviour GaAs. Cutting temperature, sub-surface damage depth, cutting stresses, evolution dislocations and subsequent microstructural changes extracted from simulation. The simulated MD data indicated that GaAs is accompanied by dislocation nucleation grain boundaries (GBs) leading initiation plastic deformation. Furthermore, 1/2〈1 1 0〉 main type responsible for magnitude forces extent both observed reduce an increase scratch velocity whereas temperature scaled velocity. As depth scratch, increased forces, damage-depth. A phenomenon fluctuation wave crests troughs was only not single-crystal